IDW40G65C5FKSA1

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Infineon Technologies

DIODE SIL CARB 650V 40A TO247-3

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Unknown

Infineon Technologies

DIODE SIL CARB 650V 40A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IDW40G65C5FKSA1

Capacitance @ Vr, F	1140 pF
Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	1.4 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO247-3-1
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Speed	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Capacitance @ Vr, F
Infineon Technologies IDW40G65C5FKSA1	No Recovery Time	SiC (Silicon Carbide) Schottky	650 V	175 ░C	-55 C	PG-TO247-3-1	Through Hole	1.4 mA	TO-247-3	1.7 V	40 A	0 ns	1140 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 40A Through Hole PG-TO247-3-1

Technical documentation and resources