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DIODE SIL CARB 650V 40A TO247-3
| Part | Speed | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Mounting Type | Current - Reverse Leakage @ Vr | Package / Case | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | No Recovery Time | SiC (Silicon Carbide) Schottky | 650 V | 175 ░C | -55 C | PG-TO247-3-1 | Through Hole | 1.4 mA | TO-247-3 | 1.7 V | 40 A | 0 ns | 1140 pF |