DMN2600UFB-7

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Diodes Inc

MOSFET, N-CH, 25V, 1.3A, X1-DFN1006 ROHS COMPLIANT: YES

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Active

Diodes Inc

MOSFET, N-CH, 25V, 1.3A, X1-DFN1006 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2600UFB-7

Current - Continuous Drain (Id) @ 25°C	1.3 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.85 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-UFDFN
Power Dissipation (Max) [Max]	540 mW
Rds On (Max) @ Id, Vgs	350 mOhm
Supplier Device Package	X1-DFN1006-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

N-Channel MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Technology	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Vgs (Max)
Diodes Inc DMN2600UFB-7	1.8 V 4.5 V	1 V	Surface Mount	MOSFET (Metal Oxide)	25 V	N-Channel	540 mW	-55 °C	150 °C	0.85 nC	350 mOhm	1.3 A	X1-DFN1006-3	3-UFDFN	8 V

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General part information

N-Channel MOSFET

Technical documentation and resources