N-Channel MOSFET
| Part | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Mounting Type | Technology | Drain to Source Voltage (Vdss) | FET Type | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Package / Case | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 1.8 V 4.5 V | 1 V | Surface Mount | MOSFET (Metal Oxide) | 25 V | N-Channel | 540 mW | -55 °C | 150 °C | 0.85 nC | 350 mOhm | 1.3 A | X1-DFN1006-3 | 3-UFDFN | 8 V |