DMN3055LFDBQ-13

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Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3055LFDBQ-13

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	11.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	458 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power - Max [Max]	810 mW
Qualification	AEC-Q101
Supplier Device Package	U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id	1.5 V

Dual N-Channel Enhancement Mode MOSFET

Part	Grade	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Qualification	Gate Charge (Qg) (Max) @ Vgs	Configuration	Mounting Type	Power - Max [Max]
Diodes Inc DMN3055LFDBQ-13	Automotive	5 A	U-DFN2020-6 (Type B)	6-UDFN Exposed Pad	1.5 V	458 pF	-55 °C	150 °C	30 V	AEC-Q101	11.2 nC	2 N-Channel (Dual)	Surface Mount	810 mW

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General part information

This MOSFET is designed to meet the stringent requirements of automotive applications.