DMN3055LFDBQ Series

Dual N-Channel Enhancement Mode MOSFET

Catalog

Dual N-Channel Enhancement Mode MOSFET

Part	Grade	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Qualification	Gate Charge (Qg) (Max) @ Vgs	Configuration	Mounting Type	Power - Max [Max]
Diodes Inc DMN3055LFDBQ-13	Automotive	5 A	U-DFN2020-6 (Type B)	6-UDFN Exposed Pad	1.5 V	458 pF	-55 °C	150 °C	30 V	AEC-Q101	11.2 nC	2 N-Channel (Dual)	Surface Mount	810 mW

Catalog

Dual N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• The DMN3055LFDBQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications.