IPP80N08S207AKSA1

Obsolete

Infineon Technologies

INFINEON’S IPP80N08S2-07 IS A 75V, 140A N-CHANNEL MOSFET WITH ULTRA LOW RDS(ON), 175°C MAX TEMP, AEC Q101 QUALIFIED. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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Documents英飞凌 IPB80N08S2-07 IPP80N08S2-07 IPI80N08S2-07 75V 175℃ N沟道增强型OptiMOS-T2功率晶体管数据手册（datasheet）Datasheet

IPP80N08S207AKSA1

Obsolete

Infineon Technologies

INFINEON’S IPP80N08S2-07 IS A 75V, 140A N-CHANNEL MOSFET WITH ULTRA LOW RDS(ON), 175°C MAX TEMP, AEC Q101 QUALIFIED. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

Deep-Dive with AI

Documents英飞凌 IPB80N08S2-07 IPP80N08S2-07 IPI80N08S2-07 75V 175℃ N沟道增强型OptiMOS-T2功率晶体管数据手册（datasheet）Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP80N08S207AKSA1

Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds	4700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	7.4 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPP80N08 Series

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Qualification	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)
Infineon Technologies IPP80N08S207AKSA1	N-Channel	180 nC	10 V	20 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	300 W	4700 pF	7.4 mOhm	75 V	Through Hole	PG-TO220-3-1	TO-220-3	4 V
Infineon Technologies IPP80N08S2L07AKSA1	N-Channel		4.5 V 10 V	20 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	300 W		7.1 mOhm	75 V	Through Hole	PG-TO220-3-1	TO-220-3	2 V	5400 pF	233 nC
Infineon Technologies IPP80N08S406AKSA1	N-Channel		10 V	20 V	MOSFET (Metal Oxide)	-55 °C	175 ░C		4800 pF		80 V	Through Hole	PG-TO220-3-1	TO-220-3	4 V		70 nC	Automotive	AEC-Q101	5.8 mOhm	150 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPP80N08 Series

N-Channel 75 V 80A (Tc) 300W (Tc) Through Hole PG-TO220-3-1

Documents

Technical documentation and resources

英飞凌 IPB80N08S2-07 IPP80N08S2-07 IPI80N08S2-07 75V 175℃ N沟道增强型OptiMOS-T2功率晶体管数据手册（datasheet）

Data Sheets