IPP80N08 Series

Catalog

INFINEON’S IPP80N08S2-07 IS A 75V, 140A N-CHANNEL MOSFET WITH ULTRA LOW RDS(ON), 175°C MAX TEMP, AEC Q101 QUALIFIED. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Qualification	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)
Infineon Technologies IPP80N08S207AKSA1	N-Channel	180 nC	10 V	20 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	300 W	4700 pF	7.4 mOhm	75 V	Through Hole	PG-TO220-3-1	TO-220-3	4 V
Infineon Technologies IPP80N08S2L07AKSA1	N-Channel		4.5 V 10 V	20 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	300 W		7.1 mOhm	75 V	Through Hole	PG-TO220-3-1	TO-220-3	2 V	5400 pF	233 nC
Infineon Technologies IPP80N08S406AKSA1	N-Channel		10 V	20 V	MOSFET (Metal Oxide)	-55 °C	175 ░C		4800 pF		80 V	Through Hole	PG-TO220-3-1	TO-220-3	4 V		70 nC	Automotive	AEC-Q101	5.8 mOhm	150 W