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DMN6013LFGQ-13 - PowerDI3333-8

DMN6013LFGQ-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN6013LFGQ-13 - PowerDI3333-8

DMN6013LFGQ-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN6013LFGQ-13
Current - Continuous Drain (Id) @ 25°C45 A
Current - Continuous Drain (Id) @ 25°C10.3 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]55.4 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2577 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)1 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs13 mOhm
Supplier Device PackagePOWERDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.33
6000$ 0.31
9000$ 0.30

Description

General part information

DMN6013LFGQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: motor control, DC to DC converters, and reverse polarity protection.