DMN6013LFGQ Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	FET Type	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMN6013LFGQ-13	N-Channel	Automotive	-55 °C	150 °C	13 mOhm	8-PowerVDFN	1 W	60 V	Surface Mount	POWERDI3333-8	45 A	10.3 A	2577 pF	20 V	MOSFET (Metal Oxide)	55.4 nC	AEC-Q101	3 V	4.5 V 10 V
Diodes Inc DMN6013LFG-7	N-Channel		-55 °C	150 °C	13 mOhm	8-PowerVDFN	1 W	60 V	Surface Mount	POWERDI3333-8	45 A	10.3 A	2577 pF	20 V	MOSFET (Metal Oxide)	55.4 nC		3 V	4.5 V 10 V

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON)– Ensures on state losses are minimized

• Small form factor thermally efficient package enables higher density end products

• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMN6013LFGQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: motor control, DC to DC converters, and reverse polarity protection.