AUIRF7313Q

Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 6.9A 8SOIC

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Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 6.9A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF7313Q

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6.9 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	33 nC
Input Capacitance (Ciss) (Max) @ Vds	755 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.4 W
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Configuration
Infineon Technologies AUIRF7313Q	30 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	2.4 W	33 nC	3 V	29 mOhm	755 pF	Surface Mount	6.9 A	8-SOIC	-55 °C	175 ░C	Logic Level Gate	2 N-Channel (Dual)
Infineon Technologies AUIRF7313QTR	30 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	2.4 W	33 nC	3 V	29 mOhm	755 pF	Surface Mount	6.9 A	8-SOIC	-55 °C	175 ░C	Logic Level Gate	2 N-Channel (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 6.9A 2.4W Surface Mount 8-SOIC

Technical documentation and resources