MOSFET 2N-CH 30V 6.9A 8SOIC
| Part | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Technology | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 30 V | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | 2.4 W | 33 nC | 3 V | 29 mOhm | 755 pF | Surface Mount | 6.9 A | 8-SOIC | -55 °C | 175 ░C | Logic Level Gate | 2 N-Channel (Dual) |
Infineon Technologies | 30 V | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | 2.4 W | 33 nC | 3 V | 29 mOhm | 755 pF | Surface Mount | 6.9 A | 8-SOIC | -55 °C | 175 ░C | Logic Level Gate | 2 N-Channel (Dual) |