DMNH6042SK3-13

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Diodes Inc

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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DMNH6042SK3-13

Active

Diodes Inc

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMNH6042SK3-13

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	492 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	2 W
Qualification	AEC-Q101
Supplier Device Package	TO-252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

DMNH6042SSDQ Series

60V 175°C N-Channel Enhancement Mode MOSFET

Part	Grade	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Qualification	Technology	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Diodes Inc DMNH6042SK3Q-13	Automotive	4.5 V 10 V	2 W	Surface Mount	3 V	TO-252-3	20 V	60 V	-55 °C	175 ░C	N-Channel	25 A	8.8 nC	584 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	MOSFET (Metal Oxide)
Diodes Inc DMNH6042SK3-13	Automotive	4.5 V 10 V	2 W	Surface Mount	3 V	TO-252-3	20 V	60 V	-55 °C	175 ░C	N-Channel	25 A	8.8 nC	492 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	MOSFET (Metal Oxide)
Diodes Inc DMNH6042SSDQ-13	Automotive			Surface Mount	3 V	8-SO		60 V	-55 °C	175 ░C		16.7 A			8-SOIC	AEC-Q101	MOSFET (Metal Oxide)	3.9 mm	0.154 in	584 pF	2 N-Channel (Dual)	2.1 W	4.2 nC	50 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.69
		10	$ 0.60
		100	$ 0.42
		500	$ 0.35
		1000	$ 0.30
	Digi-Reel®	1	$ 0.69
		10	$ 0.60
		100	$ 0.42
		500	$ 0.35
		1000	$ 0.30
	Tape & Reel (TR)	2500	$ 0.26
		5000	$ 0.25
		12500	$ 0.24

Description

General part information

DMNH6042SSDQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.