DMNH6042SSDQ Series

60V 175°C N-Channel Enhancement Mode MOSFET

Catalog

60V 175°C N-Channel Enhancement Mode MOSFET

Part	Grade	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Qualification	Technology	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Diodes Inc DMNH6042SK3Q-13	Automotive	4.5 V 10 V	2 W	Surface Mount	3 V	TO-252-3	20 V	60 V	-55 °C	175 ░C	N-Channel	25 A	8.8 nC	584 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	MOSFET (Metal Oxide)
Diodes Inc DMNH6042SK3-13	Automotive	4.5 V 10 V	2 W	Surface Mount	3 V	TO-252-3	20 V	60 V	-55 °C	175 ░C	N-Channel	25 A	8.8 nC	492 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	MOSFET (Metal Oxide)
Diodes Inc DMNH6042SSDQ-13	Automotive			Surface Mount	3 V	8-SO		60 V	-55 °C	175 ░C		16.7 A			8-SOIC	AEC-Q101	MOSFET (Metal Oxide)	3.9 mm	0.154 in	584 pF	2 N-Channel (Dual)	2.1 W	4.2 nC	50 mOhm

Catalog

60V 175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application

• Low On-Resistance

• Low Input Capacitance

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.