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STB28N65M2 - D2Pak

STB28N65M2

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 650 V, 20 A, 0.15 OHM, TO-263 (D2PAK), SURFACE MOUNT

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DocumentsDatasheetDatasheet+27
STB28N65M2 - D2Pak

STB28N65M2

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 650 V, 20 A, 0.15 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheetDatasheet+27

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB28N65M2
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1440 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)170 W
Rds On (Max) @ Id, Vgs180 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.46
10$ 2.90
100$ 2.35
500$ 2.09
Digi-Reel® 1$ 3.46
10$ 2.90
100$ 2.35
500$ 2.09
Tape & Reel (TR) 1000$ 1.79
2000$ 1.68
5000$ 1.61
NewarkEach (Supplied on Cut Tape) 1$ 5.31
10$ 3.95
25$ 3.66
50$ 3.36
100$ 3.07
250$ 2.88
500$ 2.70

Description

General part information

STB28N65M2 Series

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.