STB28N65M2 Series

N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package

Catalog

N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package

Part	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Drain to Source Voltage (Vdss)
STMicroelectronics STB28N65M2	25 V	TO-263 (D2PAK)	10 V	MOSFET (Metal Oxide)	170 W	180 mOhm	35 nC	4 V	Surface Mount	20 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	1440 pF	N-Channel	650 V

Catalog

N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.