DMTH6015LDVWQ-7

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 9.2A I(D), 60V, 0.0205OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 9.2A I(D), 60V, 0.0205OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

Technical Specifications

Parameters and characteristics for this part

Specification	DMTH6015LDVWQ-7

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	24.5 A, 9.2 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	14.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	825 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	1.46 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	20.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

60V +175°C N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Gate Charge (Qg) (Max) @ Vgs	Grade	Vgs(th) (Max) @ Id	Package / Case	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Power - Max	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Power - Max [Max]
Diodes Inc DMTH6015LPDWQ-13	20 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	AEC-Q101	14.3 nC	Automotive	2.5 V	8-PowerTDFN	2 N-Channel (Dual)	825 pF	60 V	2.6 W 39.5 W	PowerDI5060-8 (Type UXD)	9.4 A 36.3 A	Surface Mount
Diodes Inc DMTH6015LDVWQ-7		MOSFET (Metal Oxide)	-55 °C	175 ░C	AEC-Q101	14.3 nC	Automotive	2.5 V	8-PowerVDFN	2 N-Channel (Dual)	825 pF	60 V			9.2 A 24.5 A	Surface Mount	20.5 mOhm	1.46 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.