DMTH6015LDVWQ Series

60V +175°C N-Channel Enhancement Mode MOSFET

Catalog

60V +175°C N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Gate Charge (Qg) (Max) @ Vgs	Grade	Vgs(th) (Max) @ Id	Package / Case	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Power - Max	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Power - Max [Max]
Diodes Inc DMTH6015LPDWQ-13	20 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	AEC-Q101	14.3 nC	Automotive	2.5 V	8-PowerTDFN	2 N-Channel (Dual)	825 pF	60 V	2.6 W 39.5 W	PowerDI5060-8 (Type UXD)	9.4 A 36.3 A	Surface Mount
Diodes Inc DMTH6015LDVWQ-7		MOSFET (Metal Oxide)	-55 °C	175 ░C	AEC-Q101	14.3 nC	Automotive	2.5 V	8-PowerVDFN	2 N-Channel (Dual)	825 pF	60 V			9.2 A 24.5 A	Surface Mount	20.5 mOhm	1.46 W

Catalog

60V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient TemperatureEnvironments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Low RDS(ON) – Ensures On-State Losses are Minimized

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Wettable Flank for Improved Optical Inspection

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• The DMTH6015LDVWQ is suitable for automotive applicationsrequiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF 16949certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.