IXFT6N100F

Obsolete

IXYS

MOSFET N-CH 1000V 6A TO268

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Obsolete

IXYS

MOSFET N-CH 1000V 6A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXFT6N100F

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds	1770 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	1.9 Ohm
Supplier Device Package	TO-268
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5.5 V

Part	FET Type	Supplier Device Package	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
IXYS IXFT6N100F	N-Channel	TO-268	180 W	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	54 nC	1770 pF	1000 V	1.9 Ohm	10 V	20 V	Surface Mount	-55 °C	150 °C	6 A	5.5 V	MOSFET (Metal Oxide)
IXYS IXFT6N100Q	N-Channel	TO-268AA	180 W	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA		2200 pF	1000 V	1.9 Ohm	10 V	20 V	Surface Mount	-55 °C	150 °C	6 A	4.5 V	MOSFET (Metal Oxide)	48 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1000 V 6A (Tc) 180W (Tc) Surface Mount TO-268

Technical documentation and resources

No documents available