MOSFET N-CH 1000V 6A TO268
| Part | FET Type | Supplier Device Package | Power Dissipation (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | N-Channel | TO-268 | 180 W | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 54 nC | 1770 pF | 1000 V | 1.9 Ohm | 10 V | 20 V | Surface Mount | -55 °C | 150 °C | 6 A | 5.5 V | MOSFET (Metal Oxide) | |
IXYS | N-Channel | TO-268AA | 180 W | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 2200 pF | 1000 V | 1.9 Ohm | 10 V | 20 V | Surface Mount | -55 °C | 150 °C | 6 A | 4.5 V | MOSFET (Metal Oxide) | 48 nC |