ZVN4306GTA

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	ZVN4306GTA

Current - Continuous Drain (Id) @ 25°C	2.1 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	3 W
Rds On (Max) @ Id, Vgs	330 mOhm
Supplier Device Package	SOT-223-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)
Diodes Inc ZVN4306GTA	3 V	60 V	-55 °C	150 °C	3 W	MOSFET (Metal Oxide)	2.1 A	10 V	5 V	SOT-223-3	TO-261-4 TO-261AA	330 mOhm	N-Channel	Surface Mount	350 pF	20 V
Diodes Inc ZVN4306A	3 V	60 V	-55 °C	150 °C	850 mW	MOSFET (Metal Oxide)	1.1 A	10 V	5 V	TO-92	TO-226-3 TO-92-3	330 mOhm	N-Channel	Through Hole	350 pF	20 V
Diodes Inc ZVN4306ASTZ	3 V	60 V	-55 °C	150 °C	850 mW	MOSFET (Metal Oxide)	1.1 A	10 V	5 V	E-Line (TO-92 compatible)	E-Line-3	330 mOhm	N-Channel	Through Hole	350 pF	20 V
Diodes Inc ZVN4306AV	3 V	60 V	-55 °C	150 °C	850 mW	MOSFET (Metal Oxide)	1.1 A	10 V	5 V	TO-92	TO-226-3 TO-92-3	330 mOhm	N-Channel	Through Hole	350 pF	20 V

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General part information

N-Channel Enhancement Mode MOSFET

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