Catalog
N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Supplier Device Package | Package / Case | Rds On (Max) @ Id, Vgs | FET Type | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 3 V | 60 V | -55 °C | 150 °C | 3 W | MOSFET (Metal Oxide) | 2.1 A | 10 V | 5 V | SOT-223-3 | TO-261-4 TO-261AA | 330 mOhm | N-Channel | Surface Mount | 350 pF | 20 V |
Diodes Inc | 3 V | 60 V | -55 °C | 150 °C | 850 mW | MOSFET (Metal Oxide) | 1.1 A | 10 V | 5 V | TO-92 | TO-226-3 TO-92-3 | 330 mOhm | N-Channel | Through Hole | 350 pF | 20 V |
Diodes Inc | 3 V | 60 V | -55 °C | 150 °C | 850 mW | MOSFET (Metal Oxide) | 1.1 A | 10 V | 5 V | E-Line (TO-92 compatible) | E-Line-3 | 330 mOhm | N-Channel | Through Hole | 350 pF | 20 V |
Diodes Inc | 3 V | 60 V | -55 °C | 150 °C | 850 mW | MOSFET (Metal Oxide) | 1.1 A | 10 V | 5 V | TO-92 | TO-226-3 TO-92-3 | 330 mOhm | N-Channel | Through Hole | 350 pF | 20 V |