IR2136PBF

Obsolete

Infineon Technologies

DRIVER, MOSFET, 3PH HIGH/LOW, 2136

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IR2136PBF

Obsolete

Infineon Technologies

DRIVER, MOSFET, 3PH HIGH/LOW, 2136

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2136PBF

Channel Type	3-Phase
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH	0.8 V, 3 V
Mounting Type	Through Hole
Number of Drivers	6
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	28-DIP
Package / Case	0.6 in
Package / Case	15.24 mm
Rise / Fall Time (Typ) [custom]	125 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	28-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2136 Series

Part	Logic Voltage - VIL, VIH	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Input Type	Gate Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case [x]	Package / Case [y]	Voltage - Supply [Max]	Voltage - Supply [Min]	Driven Configuration	Number of Drivers	Channel Type	High Side Voltage - Max (Bootstrap) [Max]	Package / Case	Package / Case
Infineon Technologies IR2136S	0.8 V 3 V	Surface Mount	125 ns	50 ns	Inverting	IGBT N-Channel MOSFET	28-SOIC	150 °C	-40 °C	28-SOIC	0.295 in	7.5 mm	20 V	10 VDC	Half-Bridge	6	3-Phase	600 V
Infineon Technologies IR2136JTR	0.8 V 3 V	Surface Mount	125 ns	50 ns	Inverting	IGBT N-Channel MOSFET	44-PLCC 32 Leads (16.58x16.58)	150 °C	-40 °C	44-LCC (J-Lead)			20 V	10 VDC	Half-Bridge	6	3-Phase	600 V	32 Leads
Infineon Technologies IR2136STR	0.8 V 3 V	Surface Mount	125 ns	50 ns	Inverting	IGBT N-Channel MOSFET	28-SOIC	150 °C	-40 °C	28-SOIC	0.295 in	7.5 mm	20 V	10 VDC	Half-Bridge	6	3-Phase	600 V
Infineon Technologies IR2136PBF	0.8 V 3 V	Through Hole	125 ns	50 ns	Inverting	IGBT N-Channel MOSFET	28-PDIP	150 °C	-40 °C	28-DIP			20 V	10 VDC	Half-Bridge	6	3-Phase	600 V	0.6 in	15.24 mm
Infineon Technologies IR2136	0.8 V 3 V	Through Hole	125 ns	50 ns	Inverting	IGBT N-Channel MOSFET	28-PDIP	150 °C	-40 °C	28-DIP			20 V	10 VDC	Half-Bridge	6	3-Phase	600 V	0.6 in	15.24 mm
Infineon Technologies IR2136SPBF	0.8 V 3 V	Surface Mount	125 ns	50 ns	Inverting	IGBT N-Channel MOSFET	28-SOIC	150 °C	-40 °C	28-SOIC	0.295 in	7.5 mm	20 V	10 VDC	Half-Bridge	6	3-Phase	600 V
Infineon Technologies IR2136J	0.8 V 3 V	Surface Mount	125 ns	50 ns	Inverting	IGBT N-Channel MOSFET	44-PLCC 32 Leads (16.58x16.58)	150 °C	-40 °C	44-LCC (J-Lead)			20 V	10 VDC	Half-Bridge	6	3-Phase	600 V	32 Leads
Infineon Technologies IR2136JTRPBF	0.8 V 3 V	Surface Mount	125 ns	50 ns	Inverting	IGBT N-Channel MOSFET	44-PLCC 32 Leads (16.58x16.58)	150 °C	-40 °C	44-LCC (J-Lead)			20 V	10 VDC	Half-Bridge	6	3-Phase	600 V	32 Leads
Infineon Technologies IR2136STRPBF	0.8 V 3 V	Surface Mount	125 ns	50 ns	Inverting	IGBT N-Channel MOSFET	28-SOIC	150 °C	-40 °C	28-SOIC	0.295 in	7.5 mm	20 V	10 VDC	Half-Bridge	6	3-Phase	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each	1	$ 6.94
		10	$ 5.87
		25	$ 5.61
		50	$ 5.36
		100	$ 5.10
		250	$ 4.83
		988	$ 4.10

Description

General part information

IR2136 Series

Half-Bridge Gate Driver IC Inverting 28-PDIP

Documents

Technical documentation and resources

No documents available