IC GATE DRVR HALF-BRIDGE 28SOIC
| Part | Logic Voltage - VIL, VIH | Mounting Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Input Type | Gate Type | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Package / Case [x] | Package / Case [y] | Voltage - Supply [Max] | Voltage - Supply [Min] | Driven Configuration | Number of Drivers | Channel Type | High Side Voltage - Max (Bootstrap) [Max] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 0.8 V 3 V | Surface Mount | 125 ns | 50 ns | Inverting | IGBT N-Channel MOSFET | 28-SOIC | 150 °C | -40 °C | 28-SOIC | 0.295 in | 7.5 mm | 20 V | 10 VDC | Half-Bridge | 6 | 3-Phase | 600 V | ||
Infineon Technologies | 0.8 V 3 V | Surface Mount | 125 ns | 50 ns | Inverting | IGBT N-Channel MOSFET | 44-PLCC 32 Leads (16.58x16.58) | 150 °C | -40 °C | 44-LCC (J-Lead) | 20 V | 10 VDC | Half-Bridge | 6 | 3-Phase | 600 V | 32 Leads | |||
Infineon Technologies | 0.8 V 3 V | Surface Mount | 125 ns | 50 ns | Inverting | IGBT N-Channel MOSFET | 28-SOIC | 150 °C | -40 °C | 28-SOIC | 0.295 in | 7.5 mm | 20 V | 10 VDC | Half-Bridge | 6 | 3-Phase | 600 V | ||
Infineon Technologies | 0.8 V 3 V | Through Hole | 125 ns | 50 ns | Inverting | IGBT N-Channel MOSFET | 28-PDIP | 150 °C | -40 °C | 28-DIP | 20 V | 10 VDC | Half-Bridge | 6 | 3-Phase | 600 V | 0.6 in | 15.24 mm | ||
Infineon Technologies | 0.8 V 3 V | Through Hole | 125 ns | 50 ns | Inverting | IGBT N-Channel MOSFET | 28-PDIP | 150 °C | -40 °C | 28-DIP | 20 V | 10 VDC | Half-Bridge | 6 | 3-Phase | 600 V | 0.6 in | 15.24 mm | ||
Infineon Technologies | 0.8 V 3 V | Surface Mount | 125 ns | 50 ns | Inverting | IGBT N-Channel MOSFET | 28-SOIC | 150 °C | -40 °C | 28-SOIC | 0.295 in | 7.5 mm | 20 V | 10 VDC | Half-Bridge | 6 | 3-Phase | 600 V | ||
Infineon Technologies | 0.8 V 3 V | Surface Mount | 125 ns | 50 ns | Inverting | IGBT N-Channel MOSFET | 44-PLCC 32 Leads (16.58x16.58) | 150 °C | -40 °C | 44-LCC (J-Lead) | 20 V | 10 VDC | Half-Bridge | 6 | 3-Phase | 600 V | 32 Leads | |||
Infineon Technologies | 0.8 V 3 V | Surface Mount | 125 ns | 50 ns | Inverting | IGBT N-Channel MOSFET | 44-PLCC 32 Leads (16.58x16.58) | 150 °C | -40 °C | 44-LCC (J-Lead) | 20 V | 10 VDC | Half-Bridge | 6 | 3-Phase | 600 V | 32 Leads | |||
Infineon Technologies | 0.8 V 3 V | Surface Mount | 125 ns | 50 ns | Inverting | IGBT N-Channel MOSFET | 28-SOIC | 150 °C | -40 °C | 28-SOIC | 0.295 in | 7.5 mm | 20 V | 10 VDC | Half-Bridge | 6 | 3-Phase | 600 V |