IPN80R3K3P7ATMA1

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Infineon Technologies

MOSFET, N-CH, 800V, 1.9A, 6.1W, SOT-223

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Infineon Technologies

MOSFET, N-CH, 800V, 1.9A, 6.1W, SOT-223

Technical Specifications

Parameters and characteristics for this part

Specification	IPN80R3K3P7ATMA1

Current - Continuous Drain (Id) @ 25°C	1.9 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.8 nC
Input Capacitance (Ciss) (Max) @ Vds	120 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	6.1 W
Rds On (Max) @ Id, Vgs	3.3 Ohm
Supplier Device Package	PG-SOT223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Technology
Infineon Technologies IPN80R3K3P7ATMA1	TO-261-4 TO-261AA	10 V	800 V	20 V	N-Channel	PG-SOT223	3.3 Ohm	1.9 A	5.8 nC	-55 °C	150 °C	6.1 W	120 pF	3.5 V	Surface Mount	MOSFET (Metal Oxide)

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General part information

N-Channel 800 V 1.9A (Tc) 6.1W (Tc) Surface Mount PG-SOT223

Technical documentation and resources