MOSFET, N-CH, 800V, 1.9A, 6.1W, SOT-223
| Part | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs (Max) | FET Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Mounting Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | TO-261-4 TO-261AA | 10 V | 800 V | 20 V | N-Channel | PG-SOT223 | 3.3 Ohm | 1.9 A | 5.8 nC | -55 °C | 150 °C | 6.1 W | 120 pF | 3.5 V | Surface Mount | MOSFET (Metal Oxide) |