XPN12006NC,L1XHQ

Active

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 20A 8TSON

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 20A 8TSON

Technical Specifications

Parameters and characteristics for this part

Specification	XPN12006NC,L1XHQ

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	347 °F
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	65 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	8-TSON Advance-WF
Supplier Device Package [x]	3.1
Supplier Device Package [y]	3.1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Grade	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package [y]	Supplier Device Package	Supplier Device Package [x]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)
Toshiba Semiconductor and Storage XPN12006NC,L1XHQ	Automotive	AEC-Q101	1100 pF	20 A	60 V	23 nC	Surface Mount	2.5 V	MOSFET (Metal Oxide)	12 mOhm	3.1	8-TSON Advance-WF	3.1	N-Channel	-55 °C	347 °F	20 V	4.5 V 10 V	8-PowerVDFN	65 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly