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MOSFET N-CH 60V 20A 8TSON
| Part | Grade | Qualification | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Vgs(th) (Max) @ Id | Technology | Rds On (Max) @ Id, Vgs | Supplier Device Package [y] | Supplier Device Package | Supplier Device Package [x] | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Automotive | AEC-Q101 | 1100 pF | 20 A | 60 V | 23 nC | Surface Mount | 2.5 V | MOSFET (Metal Oxide) | 12 mOhm | 3.1 | 8-TSON Advance-WF | 3.1 | N-Channel | -55 °C | 347 °F | 20 V | 4.5 V 10 V | 8-PowerVDFN | 65 W |