BSC022N04LS6ATMA1

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Infineon Technologies

MOSFET, N-CH, 40V, 100A, 175DEG C, 79W

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Infineon Technologies

MOSFET, N-CH, 40V, 100A, 175DEG C, 79W

Technical Specifications

Parameters and characteristics for this part

Specification	BSC022N04LS6ATMA1

Current - Continuous Drain (Id) @ 25°C	27 A, 100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	79 W, 3 W
Rds On (Max) @ Id, Vgs	2.2 mOhm
Supplier Device Package	PG-TDSON-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies BSC022N04LS6ATMA1	N-Channel	28 nC	2.3 V	MOSFET (Metal Oxide)	Surface Mount	27 A 100 A	-55 °C	175 ░C	40 V	2.2 mOhm	PG-TDSON-8-1	8-PowerTDFN	1900 pF	4.5 V 10 V	20 V	3 W 79 W
Infineon Technologies BSC022N04LSATMA1	N-Channel		2 V	MOSFET (Metal Oxide)	Surface Mount	100 A	-55 °C	150 °C	40 V	2.2 mOhm	PG-TDSON-8-6	8-PowerTDFN		4.5 V 10 V	20 V	2.5 W 69 W	2600 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 27A (Ta), 100A (Tc) 3W (Ta), 79W (Tc) Surface Mount PG-TDSON-8-1

Technical documentation and resources