MOSFET, N-CH, 40V, 100A, 175DEG C, 79W
| Part | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Technology | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | 28 nC | 2.3 V | MOSFET (Metal Oxide) | Surface Mount | 27 A 100 A | -55 °C | 175 ░C | 40 V | 2.2 mOhm | PG-TDSON-8-1 | 8-PowerTDFN | 1900 pF | 4.5 V 10 V | 20 V | 3 W 79 W | |
Infineon Technologies | N-Channel | 2 V | MOSFET (Metal Oxide) | Surface Mount | 100 A | -55 °C | 150 °C | 40 V | 2.2 mOhm | PG-TDSON-8-6 | 8-PowerTDFN | 4.5 V 10 V | 20 V | 2.5 W 69 W | 2600 pF |