BSC020N03LSGATMA2

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Infineon Technologies

LV POWER MOS

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Infineon Technologies

LV POWER MOS

Technical Specifications

Parameters and characteristics for this part

Specification	BSC020N03LSGATMA2

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Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Infineon Technologies BSC020N03LSGATMA2
Infineon Technologies BSC020N03MSGATMA1	124 nC	-55 °C	150 °C	9600 pF	N-Channel	20 V	8-PowerTDFN	30 V	PG-TDSON-8-1	Surface Mount	4.5 V 10 V	MOSFET (Metal Oxide)	2.5 W 96 W	25 A 100 A	2 V	2 mOhm

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General part information

LV POWER MOS

Technical documentation and resources

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