Beta
⌘K
LV POWER MOS
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Vgs (Max) | Package / Case | Drain to Source Voltage (Vdss) | Supplier Device Package | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Technology | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | ||||||||||||||||
Infineon Technologies | 124 nC | -55 °C | 150 °C | 9600 pF | N-Channel | 20 V | 8-PowerTDFN | 30 V | PG-TDSON-8-1 | Surface Mount | 4.5 V 10 V | MOSFET (Metal Oxide) | 2.5 W 96 W | 25 A 100 A | 2 V | 2 mOhm |