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ZXMN7A11KTC - TO-252-2

ZXMN7A11KTC

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 4.2A I(D), 70V, 0.13OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, DPAK-3

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ZXMN7A11KTC - TO-252-2

ZXMN7A11KTC

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 4.2A I(D), 70V, 0.13OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, DPAK-3

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Technical Specifications

Parameters and characteristics for this part

SpecificationZXMN7A11KTC
Current - Continuous Drain (Id) @ 25°C4.2 A
Drain to Source Voltage (Vdss)70 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.4 nC
Input Capacitance (Ciss) (Max) @ Vds298 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)2.11 W
Rds On (Max) @ Id, Vgs130 mOhm
Supplier Device PackageTO-252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.32
10$ 0.83
100$ 0.55
500$ 0.43
1000$ 0.39
Digi-Reel® 1$ 1.32
10$ 0.83
100$ 0.55
500$ 0.43
1000$ 0.39
Tape & Reel (TR) 2500$ 0.35
5000$ 0.32
7500$ 0.31
12500$ 0.31
NewarkEach (Supplied on Cut Tape) 1$ 1.48
10$ 0.96
25$ 0.89
50$ 0.83
100$ 0.77
250$ 0.71
500$ 0.65
1000$ 0.59

Description

General part information

ZXMN7A11G Series

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.