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ZXMN7A11GTA - SOT-223-3

ZXMN7A11GTA

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 3.8A I(D), 70V, 0.13OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-261AA, SOT-223, 4-PIN

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ZXMN7A11GTA - SOT-223-3

ZXMN7A11GTA

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 3.8A I(D), 70V, 0.13OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-261AA, SOT-223, 4-PIN

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Technical Specifications

Parameters and characteristics for this part

SpecificationZXMN7A11GTA
Current - Continuous Drain (Id) @ 25°C2.7 A
Drain to Source Voltage (Vdss)70 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.4 nC
Input Capacitance (Ciss) (Max) @ Vds298 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max) [Max]2 W
Rds On (Max) @ Id, Vgs130 mOhm
Supplier Device PackageSOT-223-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.82
10$ 0.71
100$ 0.49
500$ 0.41
Digi-Reel® 1$ 0.82
10$ 0.71
100$ 0.49
500$ 0.41
Tape & Reel (TR) 1000$ 0.35
2000$ 0.31
5000$ 0.30
10000$ 0.28

Description

General part information

ZXMN7A11G Series

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.