IMZA75R090M1HXKSA1

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Infineon Technologies

THE COOLSIC™ MOSFET 750 V G1 IS A HIGHLY ROBUST SIC MOSFET FOR THE BEST COMBINATION OF SYSTEM PERFORMANCE AND RELIABILITY

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IMZA75R090M1HXKSA1

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Infineon Technologies

THE COOLSIC™ MOSFET 750 V G1 IS A HIGHLY ROBUST SIC MOSFET FOR THE BEST COMBINATION OF SYSTEM PERFORMANCE AND RELIABILITY

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Technical Specifications

Parameters and characteristics for this part

Specification	IMZA75R090M1HXKSA1

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	750 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	15 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	542 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max) [Max]	113 W
Rds On (Max) @ Id, Vgs	83 mOhm
Supplier Device Package	PG-TO247-4
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]	23 V
Vgs (Max) [Min]	-5 V
Vgs(th) (Max) @ Id	5.6 V

IMZA75R090 Series

Part	Vgs (Max) [Max]	Vgs (Max) [Min]	FET Type	Vgs(th) (Max) @ Id	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IMZA75R090M1HXKSA1	23 V	-5 V	N-Channel	5.6 V	SiC (Silicon Carbide Junction Transistor)	TO-247-4	15 V	20 V	Through Hole	15 nC	PG-TO247-4	542 pF	113 W	83 mOhm	23 A	750 V	-55 °C	175 ░C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.66
		10	$ 6.92
		30	$ 6.60
		120	$ 5.73
		270	$ 5.47
		510	$ 4.99
		1020	$ 4.35
Newark	Each	1	$ 8.40
		10	$ 7.51
		25	$ 6.80
		50	$ 6.48
		100	$ 5.86
		480	$ 5.21
		720	$ 5.10

Description

General part information

IMZA75R090 Series

The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.

Documents

Technical documentation and resources