THE COOLSIC™ MOSFET 750 V G1 IS A HIGHLY ROBUST SIC MOSFET FOR THE BEST COMBINATION OF SYSTEM PERFORMANCE AND RELIABILITY
| Part | Vgs (Max) [Max] | Vgs (Max) [Min] | FET Type | Vgs(th) (Max) @ Id | Technology | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 23 V | -5 V | N-Channel | 5.6 V | SiC (Silicon Carbide Junction Transistor) | TO-247-4 | 15 V | 20 V | Through Hole | 15 nC | PG-TO247-4 | 542 pF | 113 W | 83 mOhm | 23 A | 750 V | -55 °C | 175 ░C |