Zenode.ai Logo
LM74800QDRRRQ1

LM74800QDRRRQ1

Active
Texas Instruments

3-V TO 65-V, AUTOMOTIVE IDEAL DIODE CONTROLLER DRIVING BACK TO BACK NFETS

Find alt
LM74800QDRRRQ1

LM74800QDRRRQ1

Active
Texas Instruments

3-V TO 65-V, AUTOMOTIVE IDEAL DIODE CONTROLLER DRIVING BACK TO BACK NFETS

Find alt

Description

General part information

LM7480-Q1 Series

The LM7480x-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM7480-Q1 has two variants, LM74800-Q1 and LM74801-Q1. LM74800-Q1 employs reverse current blocking using linear regulation and comparator scheme vs. LM74801-Q1 which supports comparator based scheme. With Common Drain configuration of the power MOSFETs, the mid-point can be utilized for OR-ing designs using an another ideal diode. The LM7480x-Q1 has a maximum voltage rating of 65 V. The loads can be protected from extended overvoltage transients like 200-V Unsuppressed Load Dumps in 24-V Battery systems by configuring the device with external MOSFETs in Common Source topology.

The LM7480x-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM7480-Q1 has two variants, LM74800-Q1 and LM74801-Q1. LM74800-Q1 employs reverse current blocking using linear regulation and comparator scheme vs. LM74801-Q1 which supports comparator based scheme. With Common Drain configuration of the power MOSFETs, the mid-point can be utilized for OR-ing designs using an another ideal diode. The LM7480x-Q1 has a maximum voltage rating of 65 V. The loads can be protected from extended overvoltage transients like 200-V Unsuppressed Load Dumps in 24-V Battery systems by configuring the device with external MOSFETs in Common Source topology.

Technical Specifications

Parameters and characteristics for this part

SpecificationLM74800QDRRRQ1
ApplicationsRedundant Power Supplies
Current - Output (Max)2.6 A
Current - Supply413 µA
Delay Time - OFF500 ns
Delay Time - ON2.6 µs
FET TypeN-Channel
GradeAutomotive
Input Ratio1
Internal Switch(s)No
Mounting TypeWettable Flank, Surface Mount
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Output Ratio1
Package / Case12-WFDFN Exposed Pad
Package Length3 mm
Package Name12-WSON
Package Width3 mm
QualificationAEC-Q100
TypeN+1 ORing Controller
Voltage - Supply (Maximum)65 V
Voltage - Supply (Minimum)3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part