PMPB47XP,115

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Nexperia USA Inc.

30 V, SINGLE P-CHANNEL TRENCH MOSFET

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PMPB47XP,115

Active

Nexperia USA Inc.

30 V, SINGLE P-CHANNEL TRENCH MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMPB47 Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB47XP,115

Current - Continuous Drain (Id) (Ta)	4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	21 nC
Input Capacitance (Ciss) (Max)	1365 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UDFN Exposed Pad
Package Name	DFN2020MD-6
Power Dissipation (Max)	12.5 W, 1.7 W
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	900 mV

PMPB47 Series

30 V, single P-channel Trench MOSFET

Part	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Vgs (Max)	Package Name	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Mounting Type	Technology	FET Type	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)
Nexperia USA Inc. PMPB47XP,115	-55 °C	150 °C	900 mV	30 V	21 nC	12 V	DFN2020MD-6	6-UDFN Exposed Pad	4.5 V	1.8 V	1365 pF	Surface Mount	MOSFET (Metal Oxide)	P-Channel	1.7 W 12.5 W	4 A