30 V, single P-channel Trench MOSFET
30 V, single P-channel Trench MOSFET
| Part | Operating Temperature (Min) | Operating Temperature (Max) | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Max) | Vgs (Max) | Package Name | Package / Case | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Input Capacitance (Ciss) (Max) | Mounting Type | Technology | FET Type | Power Dissipation (Max) | Current - Continuous Drain (Id) (Ta) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | -55 °C | 150 °C | 900 mV | 30 V | 21 nC | 12 V | DFN2020MD-6 | 6-UDFN Exposed Pad | 4.5 V | 1.8 V | 1365 pF | Surface Mount | MOSFET (Metal Oxide) | P-Channel | 1.7 W 12.5 W | 4 A |