SPA04N60C3XKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 4.5A TO220-FP

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Obsolete

Infineon Technologies

MOSFET N-CH 650V 4.5A TO220-FP

Technical Specifications

Parameters and characteristics for this part

Specification	SPA04N60C3XKSA1

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	950 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Rds On (Max) @ Id, Vgs	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies SPA04N60C3XKSA1	950 mOhm	MOSFET (Metal Oxide)	20 V	3.9 V	N-Channel	TO-220-3 Full Pack	-55 °C	150 °C	Through Hole	4.5 A	10 V	31 W	25 nC	650 V
Infineon Technologies SPA04N50C3XKSA1	950 mOhm	MOSFET (Metal Oxide)	20 V	3.9 V	N-Channel	TO-220-3 Full Pack	-55 °C	150 °C	Through Hole	4.5 A	10 V	31 W	22 nC	560 V	470 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 4.5A (Tc) 31W (Tc) Through Hole PG-TO220-3-31

Technical documentation and resources

No documents available