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MOSFET N-CH 650V 4.5A TO220-FP
| Part | Rds On (Max) @ Id, Vgs | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | FET Type | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 950 mOhm | MOSFET (Metal Oxide) | 20 V | 3.9 V | N-Channel | TO-220-3 Full Pack | -55 °C | 150 °C | Through Hole | 4.5 A | 10 V | 31 W | 25 nC | 650 V | |
Infineon Technologies | 950 mOhm | MOSFET (Metal Oxide) | 20 V | 3.9 V | N-Channel | TO-220-3 Full Pack | -55 °C | 150 °C | Through Hole | 4.5 A | 10 V | 31 W | 22 nC | 560 V | 470 pF |