STE180NE10

Obsolete

STMicroelectronics

MOSFET N-CH 100V 180A ISOTOP

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Obsolete

STMicroelectronics

MOSFET N-CH 100V 180A ISOTOP

Technical Specifications

Parameters and characteristics for this part

Specification	STE180NE10

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	795 nC
Input Capacitance (Ciss) (Max) @ Vds	21000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	ISOTOP
Power Dissipation (Max)	360 W
Rds On (Max) @ Id, Vgs	6 Ohm
Supplier Device Package	ISOTOP®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]
STMicroelectronics STE110NS20FD	200 V	N-Channel	150 °C	ISOTOP®	10 V	20 V	110 A	500 W	Chassis Mount	24 mOhm	4 V	504 nC	ISOTOP	MOSFET (Metal Oxide)	7900 pF
STMicroelectronics STE180NE10	100 V	N-Channel		ISOTOP®	10 V	20 V	180 A	360 W	Chassis Mount	6 Ohm	4 V	795 nC	ISOTOP	MOSFET (Metal Oxide)		21000 pF	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 180A (Tc) 360W (Tc) Chassis Mount ISOTOP®

Technical documentation and resources