MOSFET N-CH 200V 110A ISOTOP
| Part | Drain to Source Voltage (Vdss) | FET Type | Operating Temperature | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 200 V | N-Channel | 150 °C | ISOTOP® | 10 V | 20 V | 110 A | 500 W | Chassis Mount | 24 mOhm | 4 V | 504 nC | ISOTOP | MOSFET (Metal Oxide) | 7900 pF | |||
STMicroelectronics | 100 V | N-Channel | ISOTOP® | 10 V | 20 V | 180 A | 360 W | Chassis Mount | 6 Ohm | 4 V | 795 nC | ISOTOP | MOSFET (Metal Oxide) | 21000 pF | -55 °C | 150 °C |