IDH12G65C5XKSA2
ActiveSILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, SINGLE, 650 V, 12 A, 18 NC, TO-220
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IDH12G65C5XKSA2
ActiveSILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, SINGLE, 650 V, 12 A, 18 NC, TO-220
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Technical Specifications
Parameters and characteristics for this part
| Specification | IDH12G65C5XKSA2 |
|---|---|
| Capacitance @ Vr, F | 360 pF |
| Current - Average Rectified (Io) | 12 A |
| Current - Reverse Leakage @ Vr | 190 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | PG-TO220-2-1 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
Pricing
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Description
General part information
IDH12G65 Series
The CoolSiC™ Schottky diode 650 V, 12 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Qcx Vf).
Documents
Technical documentation and resources