SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, SINGLE, 650 V, 12 A, 18 NC, TO-220
| Part | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Technology | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Current - Average Rectified (Io) | Package / Case | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 0 ns | 650 V | 190 µA | 360 pF | SiC (Silicon Carbide) Schottky | 175 ░C | -55 C | No Recovery Time | 12 A | TO-220-2 | Through Hole | PG-TO220-2-1 |