IKFW50N65EH5XKSA1

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Infineon Technologies

IGBT, 650V, 59A, 124W, HSIP247 ROHS COMPLIANT: YES

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IKFW50N65EH5XKSA1

Active

Infineon Technologies

IGBT, 650V, 59A, 124W, HSIP247 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IKFW50N65EH5XKSA1

Current - Collector (Ic) (Max) [Max]	59 A
Gate Charge	95 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	52 ns
Switching Energy	400 µJ, 1.2 mJ
Td (on/off) @ 25°C	138 ns, 20 ns
Test Condition	40 A, 15 V, 400 V, 15.1 Ohm
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max)	650 V

IKFW50 Series

Part	Reverse Recovery Time (trr)	Switching Energy	Mounting Type	Package / Case	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	Gate Charge	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]	IGBT Type	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Td (on/off) @ 25°C	Power - Max [Max]
Infineon Technologies IKFW50N65EH5XKSA1	52 ns	1.2 mJ 400 µJ	Through Hole	TO-247-3	20 ns 138 ns	59 A	95 nC	15 V 15.1 Ohm 40 A 400 V	-40 C	175 °C	Trench Field Stop	2.1 V	650 V
Infineon Technologies IKFW50N65ES5XKSA1	69 ns	400 µJ 860 µJ	Through Hole	TO-247-3			95 nC	10 Ohm 15 V 40 A 400 V	-40 C	175 °C	Trench Field Stop	1.7 V	650 V	19 ns 130 ns	127 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.88
		30	$ 4.43
Newark	Each	1	$ 7.91
		10	$ 7.68
		25	$ 5.41
		50	$ 4.95
		100	$ 4.49
		480	$ 4.48
		720	$ 4.38

Description

General part information

IKFW50 Series

Hard-switching 650 V, 50 ATRENCHSTOP™ 5 H5IGBT discrete in TO-247advanced isolationpackage is the highest efficiency discrete IGBT technology on the market ideally suited for customers who are looking for outstanding efficiency and power density. This package eliminates the need of isolation material and enables high power density, the best thermal performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink.