IKFW50N65ES5XKSA1
ActiveTHE IKFW50N65ES5 IS A 650 V, 50 A IGBT WITH ANTI-PARALLEL DIODE IN TO-247 ADVANCED ISOLATION PACKAGE
Deep-Dive with AI
Search across all available documentation for this part.
IKFW50N65ES5XKSA1
ActiveTHE IKFW50N65ES5 IS A 650 V, 50 A IGBT WITH ANTI-PARALLEL DIODE IN TO-247 ADVANCED ISOLATION PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IKFW50N65ES5XKSA1 |
|---|---|
| Gate Charge | 95 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 127 W |
| Reverse Recovery Time (trr) | 69 ns |
| Switching Energy | 860 µJ, 400 µJ |
| Td (on/off) @ 25°C | 19 ns, 130 ns |
| Test Condition | 10 Ohm, 40 A, 400 V, 15 V |
| Vce(on) (Max) @ Vge, Ic | 1.7 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IKFW50 Series
Hard-switching 650 V, 50 ATRENCHSTOP™ 5 S5IGBT discrete in TO-247advanced isolationpackage addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but easy design-in, faster time-to-market cycles and simplification of circuit design. This package eliminates the need of isolation material and enables high power density, the best thermal performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink.
Documents
Technical documentation and resources