SSM6L35FE,LM

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A ES6

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L35FE,LM

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	180 mA, 100 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	9.5 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Feature	Configuration	Package / Case	Supplier Device Package
Toshiba Semiconductor and Storage SSM6L35FE,LM	100 mA 180 mA	150 °C	9.5 pF	3 Ohm	Surface Mount	MOSFET (Metal Oxide)	1 V	20 V	Logic Level Gate	N and P-Channel	SOT-563 SOT-666	ES6

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General part information

Mosfet Array 20V 180mA, 100mA 150mW Surface Mount ES6

Technical documentation and resources