MOSFET N/P-CH 20V 0.18A/0.1A ES6
| Part | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Mounting Type | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | FET Feature | Configuration | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 100 mA 180 mA | 150 °C | 9.5 pF | 3 Ohm | Surface Mount | MOSFET (Metal Oxide) | 1 V | 20 V | Logic Level Gate | N and P-Channel | SOT-563 SOT-666 | ES6 |