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IPN80R900P7ATMA1 - PG-SOT223

IPN80R900P7ATMA1

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Infineon Technologies

MOSFET, N-CH, 800V, 6A, 7W, SOT-223

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IPN80R900P7ATMA1 - PG-SOT223

IPN80R900P7ATMA1

Active
Infineon Technologies

MOSFET, N-CH, 800V, 6A, 7W, SOT-223

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPN80R900P7ATMA1
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max) [Max]7 W
Rds On (Max) @ Id, Vgs900 mOhm
Supplier Device PackagePG-SOT223
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.74
10$ 1.11
100$ 0.74
500$ 0.59
1000$ 0.54
Digi-Reel® 1$ 1.74
10$ 1.11
100$ 0.74
500$ 0.59
1000$ 0.54
Tape & Reel (TR) 3000$ 0.47
6000$ 0.45
NewarkEach (Supplied on Cut Tape) 1$ 1.75
10$ 1.25
25$ 1.25
50$ 1.11
100$ 0.96
250$ 0.89
500$ 0.81
1000$ 0.75

Description

General part information

IPN80R900 Series

N-Channel 800 V 6A (Tc) 7W (Tc) Surface Mount PG-SOT223

Documents

Technical documentation and resources